
IXTK 80N25
140
120
Fig. 7. Input Adm ittance
90
80
Fig. 8. Transconductance
70
T J = -40oC
100
80
60
60
50
40
30
25oC
125oC
40
20
0
T J = 125oC
25oC
-40oC
20
10
0
4
4.5
5
5.5
6
6.5
7
7.5
0
20
40
60
80
100
120
140
160
200
V G S - Volts
Fig. 9. Source Current vs . Source-To-
Drain Voltage
10
I D - Amperes
Fig. 10. Gate Charge
180
160
140
120
100
80
9
8
7
6
5
4
V DS = 125V
I D = 40A
I G = 10mA
60
40
20
0
T J = 125oC
T J = 25oC
3
2
1
0
0.4
0.6
0.8
1
1.2
1.4
0
50
100
150
200
250
10000
V S D - Volts
Fig. 11. Capacitance
f = 1MHz
1000
Q G - nanoCoulombs
Fig. 12. Forw ard Bias Safe
Operating Area
T C = 25oC
25μs
1000
C iss
C oss
C rss
100
10
R DS (on) Limit
DC
1ms
100
1
0
5
10
15 20 25
V D S - Volts
30
35
40
1
10
V D S - Volts
100
1000
IXYS reserves the right to change limits, test conditions, and dimensions.